Get Advances in Electronic Ceramics: Ceramic Engineering and PDF

By Clive Randall, Hua-Tay Lin, Kunihito Koumoto, Paul Clem, Jonathan Salem, Dongming Zhu

ISBN-10: 0470196394

ISBN-13: 9780470196397

ISBN-10: 0470339810

ISBN-13: 9780470339817

Papers from the yankee Ceramic Society's thirty first overseas convention on complex Ceramics and Composites, held in Daytona seashore, Florida, January 21-26, 2007. issues contain advances in dielectric, piezoelectric and ferroelectric fabrics; electroceramic fabrics for sensors; thermoelectric fabrics for energy conversion purposes; and obvious conductive oxides.Content:

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Extra info for Advances in Electronic Ceramics: Ceramic Engineering and Science Proceedings, Volume 28, Issue 8

Sample text

For the improved CBTi144 films. the applied voltage would effectively work for the polarization switching. 08, respectively. at a frequency of 1 kHz. The dielectric constant changed gradually with Frequency of lOOHz to 1 MHz. Figure 4 shows P-V characteristics of Pt/CBTi144(thickness: SOOnm)/Pt capacitors at an applied voltage of 50 V and a frequency of 500 Hz. 6 pC/cm? and 357 kV/cm, respectively. For comparison. the P-V hysteresis loop of the film crystallized in air was plotted. 0 pC/cm2 and 225 kV/cm.

Xu. X. Wang, D. Yang, X. Pan, and P. '' Solid S ~ l Commun. e 134, 559-603 (2005). '% Yasuda, I. M. Sakaguchi, Y. Itoh, H. Ohwa, Y. Yamashita, M. Iwata, and Y. Ishibashi. "Effect of electric fields on donlain structure and dielectric properties of Pb(lnl/~Nb1j2)03-PbTi03 near morphotropic phase boundary," Jpn. J. Appl. fhys. 42,6205-6208 (2003). Advances in Electronic Ceramics . -S. -M. -T. Wang, R. R. -W. ,Ti,O, crystal,” Solid State Commun. 138 (4), 190-193 (2006). -S. T. M. R. Chien, and H. 40) single crystal,” JAppl.

Yoshimura and T. Ito, “Epitaxially grown YMn03 film: New candidate for nonvolatile memory devices”, Appl. Phys. , 69, 1011-1013 (1996). %. Imada, T. Kuraoka, E. Tokumitsu and H. Ishiwara, ‘‘ Ferroelectricity of YMn03 thin films on Pt( 1 1 l)/A1203(0001) and Pt( 1 1 l)/YzO,( 11 l)/Si( 1 1 1) structures grown by molecular beam e itaxy”, Jpn. J. Appl. Phys. 40, 666-671 (2001). ‘N. Fujimura, H. Tanaka, H. Kitahata, K. Tadanaga, T. Yoshimura, T. Minami, “YMnO3 thin films prepared from solutions for non volatile memory devices”, Jan.

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Advances in Electronic Ceramics: Ceramic Engineering and Science Proceedings, Volume 28, Issue 8 by Clive Randall, Hua-Tay Lin, Kunihito Koumoto, Paul Clem, Jonathan Salem, Dongming Zhu


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